Transistors Germanium GT313B (1T313B) analogue 2N1742, 2N700, GF501,GF514 USSR 10 pcs
Transistors Germanium GT313B (1T313B) analogue 2N1742, 2N700, GF501,GF514 USSR 10 pcs by S.U.R. & R Tools at Home Tools Express. Hurry! Limited time offer. Offer valid only while supplies last. The main technical characteristics of the transistor GT313B: • Structure: p-n-p • Pk max - Constant power dissipation Collector: 100 mW; • Fgr
The main technical characteristics of the transistor GT313B: • Structure: p-n-p • Pk max - Constant power dissipation Collector: 100 mW; • Fgr - Cut-off frequency of the transistor current gain for the common-emitter and common-base: at least 450 MHz; • Ukbo - Breakdown voltage collector-base for a given reverse current collector and emitter open circuit: 15 V; • Uebo - Breakdown voltage emitter-base junction reverse current at a given emitter and collector open circuit: 0.7; • Ik max - Maximum DC Collector Current: 30 mA; • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 5 mA at 12V; • h21e - Coefficient feedback voltage of the transistor small signal for the common-emitter and common-base, respectively, 20 ... 250 at 5V, 5mA; • CK - collector junction capacity: no more than 2.5 pF at 5V; • Rke us - saturation resistance between the collector and emitter: no more than 4.6 ohms; • Rm - Noise Transistor is not standardized; • tc - time constant of the feedback loop at high frequency: less than 40 ps
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